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BD942F

Description
isc Silicon PNP Power Transistor
File Size77KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD942F Overview

isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD934F/936F/938F/940F/942F
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= -150mA
·Complement
to Type BD933F/935F/937F/939F/941F
APPLICATIONS
·Designed
for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD934F
BD936F
V
CBO
Collector-Base Voltage
BD938F
BD940F
BD942F
BD934F
BD936F
V
CEO
Collector-Emitter Voltage
BD938F
BD940F
BD942F
V
EBO
I
C
I
CM
I
B
B
VALUE
-45
-60
-100
-120
-140
-45
-60
-80
-100
-120
-5
-3
-7
-0.5
19
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
W
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
4.17
55
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn

BD942F Related Products

BD942F BD934F BD936F BD938F BD940F
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