INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD787
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40~250(Min)@ I
C
= 0.2A
·Collector-Emitter
Sustaining Voltage -
: V
CEO(SUS)
= 60V(Min)
·Complement
to type BD788
APPLICATIONS
·Designed
for low power audio amplifier and low current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
80
UNIT
V
60
6
V
V
4
A
8
1
15
150
-65~150
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
8.34
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BD787
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 10mA; I
B
= 0
60
V
V
CE(
sat
)-1
Collector-Emitter Saturation Voltage
I
C
= 0.5A; I
B
= 50mA
0.4
V
V
CE(
sat
)-2
Collector-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.1A
B
0.6
V
V
CE(
sat
)-3
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
B
0.8
V
V
CE(
sat
)-4
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
2.5
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
V
BE(
on
)
I
CEX
Base-Emitter On Voltage
Collector Cutoff Current
I
CEO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
w
.cn
i
em
cs
.is
w
w
I
C
= 2A; I
B
= 0.2A
B
2.0
V
I
C
= 2A; V
CE
= 3V
1.8
1.0
0.1
0.1
V
μA
mA
mA
μA
V
CB
= 80V;V
BE(off)
= 1.5V
V
CB
= 40V;V
BE(off)
= 1.5V;T
C
=125℃
V
CE
= 30V; I
B
= 0
B
V
EB
= 6V; I
C
= 0
1.0
I
C
= 0.2A; V
CE
= 3V
40
250
h
FE-2
DC Current Gain
I
C
= 1A; V
CE
= 3V
25
h
FE-3
DC Current Gain
I
C
= 2A; V
CE
= 3V
20
h
FE-4
DC Current Gain
I
C
= 4A; V
CE
= 3V
5
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A; V
CE
= 10V
50
MHz
C
OB
Collector Output Capacitance
I
E
= 0; V
CB
= 10V; f= 0.1MHz
50
pF
isc Website：www.iscsemi.cn
2
Embedded System
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