BD546 datasheet, PDF - EEWORLD Datasheet

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BD546: Description15 A, 40 V, PNP, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size206KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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15 A, 40 V, PNP, Si, POWER TRANSISTOR

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Power Transistor

DESCRIPTION

·Collector

Current -I

= -

15A

·Collector-Emitter

Breakdown Voltage-

: V

(BR)CEO

= -40V(Min)- BD546; -60V(Min)- BD546A

-80V(Min)- BD546B; -100V(Min)- BD546C

·Complement

to Type BD545/A/B/C

APPLICATIONS

·Designed

for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(T

=25

℃)

SYMBOL

PARAMETER

BD546

VALUE

-40

UNIT

BD546/A/B/C

CBO

Collector-Base Voltage

CEO

Collector-Emitter

Voltage

.cn

.is

BD546A

BD546B

-60

-80

BD546C

BD546

-100

-40

BD546A

BD546B

-60

-80

BD546C

-100

-5

-15

3.5

150

-65~150

℃

EBO

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

@ T

=25℃

Collector Power Dissipation

@ T

=25℃

Junction Temperature

Storage Temperature Range

stg

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

1.47

35.7

UNIT

℃/W

isc Website：www.iscsemi.cn

BD546 Related Products

	BD546	BD546C	BD546B	BD546A
Description	15 A, 40 V, PNP, Si, POWER TRANSISTOR	15 A, 100 V, PNP, Si, POWER TRANSISTOR	15 A, 80 V, PNP, Si, POWER TRANSISTOR	15 A, 60 V, PNP, Si, POWER TRANSISTOR

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