INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
15A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 40V(Min)- BD545; 60V(Min)- BD545A
80V(Min)- BD545B; 100V(Min)- BD545C
·Complement
to Type BD546/A/B/C
APPLICATIONS
·Designed
for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD545
VALUE
40
UNIT
BD545/A/B/C
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter
Voltage
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BD545A
BD545B
60
80
V
BD545C
BD545
100
40
BD545A
BD545B
60
80
V
BD545C
100
5
15
3.5
W
85
150
-65~150
℃
℃
V
A
V
EBO
I
C
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.47
35.7
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD545
BD545A
I
C
= 30mA ;I
B
=0
B
BD545/A/B/C
CONDITIONS
MIN
40
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
80
100
BD545B
BD545C
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
on
)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 5A; I
B
= 0.625A
B
0.8
1.0
1.8
V
V
V
I
C
= 10A; I
B
= 2A
I
C
= 10A; V
CE
= 4V
I
CES
Collector
Cutoff Current
I
CEO
Collector
Cutoff Current
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BD545
V
CE
= 40V; V
BE
= 0
BD545A
BD545B
V
CE
= 60V; V
BE
= 0
V
CE
= 80V; V
BE
= 0
BD545C
V
CE
= 100V; V
BE
= 0
V
CE
= 30V; I
B
= 0
B
0.4
mA
BD545/A
0.7
mA
BD545B/C
V
CE
= 60V; I
B
= 0
B
I
EBO
h
FE-1
h
FE-2
h
FE-3
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
V
EB
= 5V; I
C
= 0
I
C
= 1A; V
CE
= 4V
I
C
= 5A; V
CE
= 4V
I
C
= 10A; V
CE
= 4V
60
25
10
1.0
mA
Switching times
t
on
t
off
Turn-on Time
Turn-off Time
0.6
1.0
μs
μs
I
C
= 6A; I
B1
= -I
B2
= 0.6A;
R
L
= 5Ω; V
BE(
off
)
= -4V
isc Website:www.iscsemi.cn
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