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BD545A

Description
15 A, 60 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size206KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BD545A Overview

15 A, 60 V, NPN, Si, POWER TRANSISTOR

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
15A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 40V(Min)- BD545; 60V(Min)- BD545A
80V(Min)- BD545B; 100V(Min)- BD545C
·Complement
to Type BD546/A/B/C
APPLICATIONS
·Designed
for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD545
VALUE
40
UNIT
BD545/A/B/C
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter
Voltage
w
.cn
i
em
cs
.is
w
w
BD545A
BD545B
60
80
V
BD545C
BD545
100
40
BD545A
BD545B
60
80
V
BD545C
100
5
15
3.5
W
85
150
-65~150
V
A
V
EBO
I
C
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.47
35.7
UNIT
℃/W
℃/W
isc Website:www.iscsemi.cn

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BD545A BD545C BD545B BD545
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