INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD329
DESCRIPTION
·DC
Current Gain-
: h
FE
= 85~375(Min)@ I
C
= 0.5A
·Collector-Emitter
Sustaining Voltage -
: V
CEO(SUS)
= 20V(Min)
·Complement
to type BD330
APPLICATIONS
·Especially
for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
BM
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Peak
w
.cn
i
em
cs
.is
w
w
VALUE
32
UNIT
V
20
5
V
V
3
A
1
15
150
-65~150
A
W
℃
℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
7
100
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BD329
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 30mA; I
B
= 0
20
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
B
0.5
V
V
BE(
on
)-1
Base-Emitter On Voltage
I
C
= 5mA; V
CE
= 10V
0.6
V
V
BE(
on
)-2
I
CBO
Base-Emitter On Voltage
I
C
= 2A; V
CE
= 1V
V
CB
= 32V; I
E
= 0
V
CB
= 32V; I
E
= 0,T
C
=150℃
V
EB
= 5V; I
C
= 0
1.2
0.1
10
0.1
V
μA
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
h
FE-3
DC Current Gain
f
T
Current-Gain—Bandwidth Product
w
.cn
i
em
cs
.is
w
w
I
C
= 5mA; V
CE
= 10V
50
I
C
= 0.5A; V
CE
= 1V
85
I
C
= 2A; V
CE
= 1V
40
I
C
= 50mA; V
CE
= 5V; f
test
= 100MHz
μA
375
130
MHz
isc Website：www.iscsemi.cn
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