INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
BD314
DESCRIPTION
·Excellent
Safe Operating Area
·DC
Current Gain-h
FE
= 25(Min.)@I
C
= -4A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= -1.0 V(Max)@ I
C
= -5A
·Complement
to Type BD313
APPLICATIONS
·Designed
for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
-80
UNIT
V
-80
-5
V
V
-10
A
-20
-4
115
200
-65~200
A
A
W
℃
℃
P
C
T
J
T
stg
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
isc Website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BD314
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= -200mA; I
B
=0
-80
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -5A; I
B
= -0.5A
B
-1.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -5A; I
B
= -0.5A
B
-1.8
V
V
BE(
on
)
I
CBO
Base-Emitter On Voltage
I
C
= -4A; V
CE
= -4V
-1.5
V
Collector Cutoff Current
V
CB
= -80V; I
B
= 0
B
-1.0
mA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current Gain-Bandwidth Product
w
.cn
i
em
cs
.is
w
w
V
EB
= -7.0V; I
C
= 0
I
C
= -4A; V
CE
= -4V
I
C
= -10A; V
CE
= -4V
I
C
= -0.5A; V
CE
= -10V;f=1.0MHz
-1.0
mA
25
5
4
MHz
isc Website：www.iscsemi.cn
2
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