INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD159
DESCRIPTION
·Collector–Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 350V(Min)
·DC
Current Gain-
: h
FE
= 30~240(Min) @ I
C
= 50mA
APPLICATIONS
·Designed
for power output stages for television, radio,
phonograph and other consumer product applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
w
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w
w
VALUE
375
UNIT
V
350
5
V
V
0.5
A
1.0
0.25
20
150
-65~150
A
A
W
℃
℃
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
6.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BD159
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 1.0mA; I
B
= 0
B
350
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 0.1mA; I
E
= 0
375
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1mA; I
C
= 0
5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 50mA ;I
B
= 5mA
B
1.0
V
I
CBO
Collector Cutoff Current
V
CB
= 375V
;
I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
h
FE
DC Current Gain
w
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i
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w
w
V
EB
= 5V; I
C
= 0
I
C
= 50m A; V
CE
= 10V
0.1
mA
30
240
isc Website：www.iscsemi.cn
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