BCX55-16 datasheet, PDF - EEWORLD Datasheet

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BCX55-16: Description1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243; Categorysemiconductor Discrete semiconductor; File Size50KB，2 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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BCX55-16 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243

BCX55-16 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	60 V
Processing package description	PLASTIC, SC-62, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	COLLECTOR
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Maximum ambient power consumption	1 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	100
Rated crossover frequency	130 MHz

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SMD Type

NPN Medium Power Transistors

BCX54,BCX55,BCX56

Transistors

Features

High current (max. 1 A).

Low voltage (max. 80 V).

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

BCX54

BCX55

BCX56

Collector-emitter voltage

BCX54

BCX55

BCX56

Emitter-base voltage

Collector current

Peak collector current

Peak base current

Total power dissipation

Storage temperature

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Thermal resistance from junction to solder point

EBO

tot

stg

amb

th(j-a)

th(j-s)

CEO

Symbol

CBO

Rating

100

1.5

0.2

1.3

-65 to +150

150

-65 to +150

K/W

Unit

www.kexin.com.cn

BCX55-16 Related Products

	BCX55-16	BCX54-10	BCX55	BCX56	BCX54	BCX54-16	BCX56-10	BCX55-10
Description	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR	RF POWER TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	1 A, 80 V, NPN, Si, POWER TRANSISTOR	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243
state	ACTIVE	Active	Active	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE	Active
Number of terminals	3	3	3	3	-	-	3	3
Maximum collector current	1 A	1 A	1 A	1 A	-	-	1 A	1 A
Maximum Collector-Emitter Voltage	60 V	60 V	60 V	80 V	-	-	80 V	60 V
Processing package description	PLASTIC, SC-62, 3 PIN	PLASTIC, SC-62, 3 PIN	PLASTIC, SC-62, 3 PIN	PLASTIC PACKAGE-3	-	-	PLASTIC PACKAGE-3	PLASTIC, SC-62, 3 PIN
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	Rectangle	-	-	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	YES	YES	Yes	-	-	Yes	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	-	-	FLAT	FLAT
terminal coating	TIN	TIN	TIN	tin lead	-	-	TIN LEAD	TIN
Terminal location	SINGLE	SINGLE	SINGLE	single	-	-	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE	SINGLE	SINGLE	single	-	-	SINGLE	SINGLE
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	-	COLLECTOR	COLLECTOR
Number of components	1	1	1	1	-	-	1	1
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	-	-	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	silicon	-	-	SILICON	SILICON
Transistor type	GENERAL PURPOSE SMALL SIGNAL	-	-	Universal small signal	RF POWER	RF SMALL SIGNAL	GENERAL PURPOSE POWER	-
Minimum DC amplification factor	100	25	25	63	-	-	63	25
Rated crossover frequency	130 MHz	130 MHz	130 MHz	130 MHz	-	-	130 MHz	130 MHz

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