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BC807

Description
800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size164KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BC807 Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.8000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionSOT-23, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3100 W
Transistor typeUniversal small signal
Minimum DC amplification factor60
Rated crossover frequency100 MHz
BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
BC807
BC808
BC807
BC808
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
R
θJA
T
J
T
S
Value
50
30
45
25
5
500
200
500
150
- 55 to + 150
Unit
V
V
V
mA
mW
K/W
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
Current Gain Group
-16
-25
-40
Symbol
h
FE
h
FE
h
FE
h
FE
-I
CBO
-I
EBO
-V
CEsat
-V
BE(on)
f
T
C
CBO
Min.
100
160
250
40
-
-
-
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
9
Max.
250
400
600
-
100
100
0.7
1.2
-
-
Unit
-
-
-
-
nA
nA
V
V
MHz
pF
at -V
CE
= 1 V, -I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 20 V
Emitter-Base Cutoff Current
at -V
EB
= 5 V
Collector Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base-Emitter Voltage
at -I
C
= 500 mA, -V
CE
= 1 V
Gain -Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 50 MHz
Collector-Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2006

BC807 Related Products

BC807 BC808
Description 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum collector current 0.8000 A 0.8000 A
Maximum Collector-Emitter Voltage 45 V 45 V
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN
state DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure single single
Number of components 1 1
transistor applications switch switch
Transistor component materials silicon silicon
Maximum ambient power consumption 0.3100 W 0.3100 W
Transistor type Universal small signal Universal small signal
Minimum DC amplification factor 60 60
Rated crossover frequency 100 MHz 100 MHz
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