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BC327

Description
PNP Silicon Epitaxial Planar Transistor
File Size134KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BC327 Overview

PNP Silicon Epitaxial Planar Transistor

BC327…BC328
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
These types are subdivided into three groups -16,
-25 and -40, according to their DC current gain.
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
BC327
50
45
5
800
1
625
150
BC328
30
25
Unit
V
V
V
mA
A
mW
O
C
C
- 55 to + 150
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 300 mA
Current Gain Group
-16
-25
-40
-16
-25
-40
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-I
CBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(on)
f
T
C
CBO
Min.
100
160
250
60
100
170
-
-
50
30
45
25
5
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
12
Max.
250
400
630
-
-
-
100
100
-
-
-
-
-
0.7
1.2
-
-
Unit
-
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
Collector Base Cutoff Current
at -V
CB
= 45 V
at -V
CB
= 25 V
Collector Base Breakdown Voltage
at -I
C
= 100 µA
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
Base Emitter On Voltage
at -V
CE
= 1 V, -I
C
= 300 mA
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 50 MHz
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
BC327
BC328
BC327
BC328
BC327
BC328
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007

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