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BAV20WS

Description
0.2 A, 150 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAV20WS Overview

0.2 A, 150 V, SILICON, SIGNAL DIODE

SMD Type
Surface Mount Fast Switching Diode
KAV19WS - KAV21WS
(BAV19WS - BAV21WS)
SOD-323
+0.1
1.7
-0.1
Diodes
Unit: mm
Fast switching speed
Suface mount package ldeally suited for automatic insertion
For general purpose switching applications
High Conductance
0.1
+0.05
-0.02
+0.1
2.6
-0.1
1.0max
0.475
0.375
Absolute Maximum Ratings Ta = 25
Parameter
Non-Repetitive Peak Reverse Voltage
Peak repetitive peak reverse voltage
Working peak
DC blocking voltage
RMS reverse voltage
Average Rectifed Output Current
Forward continuous current
Non-Repetitive Peak Forward Surge Curren @t=1.0
@t=1.0s
Non-Repetitive Peak Forward Surge Curren
Power dissipation
Thermal resistance junction to ambient
Operating and Storage Temperature Range
I
FRM
P
d
R
èJA
T
j
, T
STG
s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FM
I
FSM
71
106
200
400
2.5
0.5
625
200
625
-65 to +150
141
V
mA
mA
A
mA
mW
/W
100
150
200
V
KAV19WS KAV20WS KAV21WS
120
200
250
Unit
V
Electrical Characteristics Ta = 25
Parameter
KAV19WS
Reverse breakdown voltage*
KAV20WS
KAV21WS
Forward Voltage *
Peak Reverse Current
@ Rated DC Blocking Voltage*
Junction Capacitance
Reverse Recovery Time
C
j
t
rr
V
FM
I
F
= 100mA
I
F
= 200mA
I
RM
Tj = 25
Tj = 100
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 30mA,I
rr
= 0.1 X I
R
, R
L
= 100
V
(BR)R
I
R
=100
A
Symbol Testconditons
Min
120
200
250
1.0
1.25
100
15
5.0
50
nA
A
pF
ns
V
V
Typ
Max
Unit
* Short duration pulse test used to minimize self-heating effect.
Marking
NO.
Marking
KAV19WS
A8 or T2 or T3
KAV20WS
T2 or T3
KAV21WS
T3
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
www.kexin.com.cn
1

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BAV20WS BAV19WS KAV19WS KAV21WS KAV20WS
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