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BAV105

Description
0.6 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size21KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric View All

BAV105 Overview

0.6 A, SILICON, SIGNAL DIODE

BAV105 Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
BAV105
FEATURES :
• High switching speed: max. 6 ns
• General application
• Continuous reverse voltage: max. 60 V
• Repetitive peak reverse voltage: max. 60 V
• Repetitive peak forward current: max. 600 mA.
• Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
0.079 (2.00)Min.
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05g
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Maximum Continuous Forward Current
Maximum Repetitive Peak Forward Current
Maximum Surge Forward Current at t < 1s , Tj = 25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
25
°
C ambient temperature unless otherwise specified.)
Symbol
V
RM
V
R
I
F
I
FRM
I
FSM
P
D
T
J
T
S
Value
60
60
300
600
0.5
500
200
-65 to + 200
Unit
V
V
mA
mA
A
mW
°C
°C
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
Symbol
I
R
Test Condition
V
R
= 60 V
V
R
= 60 V , Tj = 150
°C
I
F
= 100 mA
I
F
= 200 mA
I
F
= 500 mA
f = 1MHz ; V
R
= 0
I
F
= 400 mA to I
R
= 400mA
R
L
= 100Ω ; measured
at I
R
= 40 mA
Min.
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
100
100
0.75
1.00
1.25
2.5
6.0
Unit
nA
µA
V
pF
ns
Forward Voltage
Diode Capacitance
Reverse Recovery Time
V
F
Cd
Trr
Page 1 of 2
Rev. 02 : March 25, 2005

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