BAS85
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
•
Low forward voltage.
•
Guard ring protected.
•
Hermetically-sealed leaded glass package.
Absolute Maximum Ratings (T
a
= 25
o
C)
Parameter
Continuous reverse voltage
Continuous forward current
Average forward current
Repetitive peak forward current
Non-repetitive peak forward current
Operating ambient temperature
Junction temperature
Storage temperature range
Thermal resistance from junction to ambient
Symbol
V
R
I
F
I
F(AV)
I
FRM
I
FSM
T
amb
T
j
T
S
R
thja
Limits
30
200
200
300
5
-65 to +125
125
-65 to +150
320
Unit
V
mA
mA
mA
A
O
O
O
C
C
C
K/W
Characteristics at T
a
= 25
o
C
Parameter
Forward voltage
at I
F
= 0.1mA
at I
F
= 1mA
at I
F
= 10mA
at I
F
= 30mA
at I
F
= 100mA
Reverse current
at V
R
= 25V
Reverse recovery time
at I
F
= 10mA, I
R
= 10mA, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
t
rr
Min.
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
240
320
400
500
800
2.3
4
Unit
mV
mV
mV
mV
mV
μA
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2005
BAS85
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2005