
Surface Mount TVS Diode; Direction: Bidirectional; V(BR) Typ (V): 64.4V; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 58V; VBR Min (V): 64.4V; VBR Max (V): 71.2V; IR Max (uA): 5uA; VC Max (V): 93.6V; Package: SMB
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Galaxy Microelectronics |
| Parts packaging code | SMB |
| package instruction | R-PDSO-J2 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Other features | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN, UL RECOGNIZED |
| Maximum breakdown voltage | 71.2 V |
| Minimum breakdown voltage | 64.4 V |
| Breakdown voltage nominal value | 67.8 V |
| Maximum clamping voltage | 93.6 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JEDEC-95 code | DO-214AA |
| JESD-30 code | R-PDSO-J2 |
| Maximum non-repetitive peak reverse power dissipation | 600 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| polarity | BIDIRECTIONAL |
| Maximum repetitive peak reverse voltage | 58 V |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal form | J BEND |
| Terminal location | DUAL |
| Base Number Matches | 1 |
