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BA159DZ

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BA159DZ Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BA157(Z) - - - BA159(Z)
VOLTAGE RANGE: 400 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECT IFIER
DO -
41
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BA157
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BA158
600
420
600
1.0
BA159D
800
560
800
BA159
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
400
280
400
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.3
5.0
100.0
300
12
55
- 55---- +150
- 55---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Therm al resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261035
BL
GALAXY ELECTRICAL
1.

BA159DZ Related Products

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