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BA159

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size193KB,4 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BA159 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
BA157 THRU BA159
FAST SILICON RECTIFIERS
Reverse Voltage – 400 to 1000 Volts
Forward Current – 1.0 Ampere
Features
•Low
forward voltage
•High
current capability
•Low
leakage current
•High
surge capability
•Low
cost
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Repetitive Peak Reverse Voltage
BA157
BA158
BA159
o
Value
400
600
1000
1
1)
Unit
V
V
V
A
A
O
O
V
RRM
V
RRM
V
RRM
Io
o
Average Rectified Current at T
amb
=50 C
Surge Forward Current, Half Cycle 50Hz, starting from T
j
=25 C
Junction Temperature
Operating and Storage Temperature Range
1)
I
FSM
T
j
T
S
35
125
-65 to +125
C
C
Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2003

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BA159 BA158 BA157
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