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BA158G

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size161KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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BA158G Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

BA157G thru BA159G
Glass Passivated Fast Recovery Rectifiers
Reverse Voltage 400 to 1000 Volts Forward Current 1.0 Ampere
Features
Plastic package has Underwriters Laboratories Flammability
Classification 94V-0
High temperature metallurgically bonded construction
For use in high frequency rectifier circuits
Fast switching for high efficiency
Glass passivated cavity-free junction
Capable of meeting environmental standards of MIL-S-19500
1.0 Ampere operation at T
A
=55
o
C with no thermal runaway
Typical I
R
less than 0.1uA
High temperature soldering guaranteed:
350
o
C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case: JEDEC DO-204AL (DO-41), molded plastic over glass
body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.33 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55
o
C
Peak forward surge current
10ms single half sine-wave superimposed on
rated load at T
A
=25
o
C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage T
A
=25
o
C
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
250
15
55.0
-55 to +150
-55 to +150
o
BA157G
400
280
400
BA158G
600
420
600
1.0
BA159DG
800
560
800
BA159G
1000
700
1000
Units
Volts
Volts
Volts
Amp
20.0
1.3
5.0
500
Amps
Volts
uA
nS
pF
C/W
o
C
C
o
1. Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
87

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BA158G BA159G BA159DG BA157G
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
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