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BA158G

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size35KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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BA158G Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BA157G THRU BA159G
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:400-1000V
CURRENT:1.0A
FEATURES
·Fast
switching
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge capability
·High
reliability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at
1.0A DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
BA157G
400
280
400
BA158G
600
420
600
1.0
30
1.3
5.0
I
R
µA
100
250
15
500
nS
pF
BA159G
1000
700
1000
units
V
V
V
A
A
V
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=75°C
t
rr
150
Maximum Reverse Recovery Time (Note 1)
C
J
Typical Junction Capacitance (Note 2)
Notes: 1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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BA158G BA159G BA157G
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