Philips Semiconductors
Product specification
Inverter
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G04; 74AHCT1G04
DESCRIPTION
The 74AHC1G04/74AHCT1G04 are high-speed Si-gate
CMOS devices.
The 74AHC1G04/74AHCT1G04 provides the inverting
buffer.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
∑(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
CONDITIONS
74AHC1G04
propagation delay input A to output Y C
L
= 15 pF; V
CC
= 5 V
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
3.1
1.5
15
74AHCT1G04
3.4
1.5
16
ns
pF
pF
UNIT
2003 Sep 04
2
Philips Semiconductors
Product specification
Inverter
74AHC1G04; 74AHCT1G04
handbook, halfpage
2
1
4
handbook, halfpage
A
Y
MNA110
MNA109
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC1G04
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
(∆t/∆f)
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
−
−
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
100
20
MIN.
4.5
0
0
−40
−
−
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
−
20
V
V
V
°C
ns/V
ns/V
74AHCT1G04
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX. UNIT
+7.0
+7.0
−20
±20
±25
±75
+150
250
V
V
mA
mA
mA
mA
°C
mW
2003 Sep 04
4
Embedded System
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