Philips Semiconductors
Product specification
2-input NAND gate
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G00; 74AHCT1G00
DESCRIPTION
The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G00 provides the 2-input NAND
function.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PARAMETER
propagation delay A and B to Y
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.5
1.5
17
AHCT1G
3.6
1.5
18
ns
pF
pF
UNIT
2002 May 27
2
Philips Semiconductors
Product specification
2-input NAND gate
RECOMMENDED OPERATING CONDITIONS
74AHC1G00; 74AHCT1G00
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
(∆t/∆f)
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
−
−
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
100
20
MIN.
4.5
0
0
−40
−
−
74AHCT1G
UNIT
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
−
20
V
V
V
°C
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2002 May 27
5
Embedded System
京公网安备 11010802033920号
EEWORLD
