Philips Semiconductors
Product specification
Inverter
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
SOT505-2 and SOT765-1 package
•
Output capability
±8
mA drive.
•
Specified from
−40
to +125
°C.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
∑(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
∑(C
L
×
V
CC2
×
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
74AHC3GU04DP
74AHC3GU04DC
TEMPERATURE
RANGE
−40
to +125
°C
−40
to +125
°C
PINS
8
8
PACKAGE
TSSOP-8
VSSOP-8
MATERIAL
plastic
plastic
PARAMETER
propagation delay nA to nY
input capacitance
power dissipation capacitance
notes 1 and 2
CONDITIONS
C
L
= 15 pF; V
CC
= 5 V
FUNCTION TABLE
See note 1.
INPUT
nA
L
H
DESCRIPTION
74AHC3GU04
The 74AHC3GU04 is a high-speed Si-gate CMOS device.
The 74AHC3GU04 provides the inverting single stage
function.
OUTPUT
nY
H
L
TYPICAL
2.5
3.0
4
ns
pF
pF
UNIT
CODE
SOT505-2
SOT765-1
MARKING
AU04
AU4
2004 Jan 16
2
Philips Semiconductors
Product specification
Inverter
RECOMMENDED OPERATING CONDITIONS
74AHC3GU04
74AHC3GU04
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient temperature
see DC and AC characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−
−
−
−
+25
−
−
TYP.
5.0
MAX.
5.5
5.5
V
CC
+125
100
20
V
V
V
°C
ns/V
ns/V
UNIT
t
r
, t
f
(∆t/∆f) input rise and fall times
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2004 Jan 16
4
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
