Standard Products
RadHard-by-Design
RHD5900 Quad Operational Amplifier
www.aeroflex.com/RHDseries
April 8, 2013
FEATURES
Single power supply operation (3.3V to 5.0V) or dual power supply operation (±1.65 to ±2.5V)
Radiation performance
- Total dose:
>1Mrad(Si); Dose rate = 50 - 300 rads(Si)/s
- ELDRS Immune
- SEL Immune
>100 MeV-cm
2
/mg
- Neutron Displacement Damage >10
14
neutrons/cm
2
Rail-to-Rail input and output range
Short Circuit Tolerant
Full military temperature range
Designed for aerospace and high reliability space applications
Packaging – Hermetic ceramic SOIC
- 16-pin, .411"L x .293"W x .105"Ht
- Weight - 0.8 grams max
Aeroflex Plainview’s Radiation Hardness Assurance Plan is DLA Certified to MIL-PRF-38534, Appendix G.
GENERAL DESCRIPTION
Aeroflex’s RHD5900 is a radiation hardened, single supply, quad operational amplifier in a 16-pin SOIC
package. The RHD5900 design uses specific circuit topology and layout methods to mitigate total ionizing
dose effects and single event latchup. These characteristics make the RHD5900 especially suited for the
harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to
+125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5900 is ideal for
demanding military and space applications.
ORGANIZATION AND APPLICATION
The RHD5900 amplifiers are capable of rail-to-rail input and outputs. Performance characteristics listed are
for general purpose operational 5V CMOS amplifier applications. The amplifiers will drive substantial
resistive or capacitive loads and are unity gain stable under normal conditions. Resistive loads in the low
kohm range can be handled without gain derating and capacitive loads of several nF can be tolerated.
CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant
to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode
protected.
The devices will not latch with SEU events to above 100 MeV-cm
2
/mg. Total dose degradation is minimal
to above 1Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 10
14
neutrons per cm
2
range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU
effects are application dependent.
SCD5900 Rev G
ABSOLUTE MAXIMUM RATINGS
Parameter
Case Operating Temperature Range
Storage Temperature Range
Junction Temperature
Supply Voltage
Input Voltage
Lead Temperature (soldering, 10 seconds)
Thermal Resistance, Junction to Case,jc
ESD Rating (MIL-STD-883, Method 3015, class 2)
Power @25°C
V
CC
- V
EE
Range
-55 to +125
-65 to +150
+150
+6.0
V
CC
+0.4
V
EE
-0.4
300
7
2,000 - 3,999
200
Units
°C
°C
°C
V
V
°C
°C/W
V
mW
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rating only;
functional operation beyond the “Operation Conditions” is not recommended and extended exposure beyond the “Operation Conditions” may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
+V
CC
V
CM
Power Supply Voltage
Input Common Mode Range
Parameter
Typical
3.3 to 5.0
V
CC
to V
EE
Units
V
V
ELECTRICAL PERFORMANCE CHARACTERISTICS
(T
C
= -55°C
TO
+125°C, +V
CC
= +5.0V -- U
NLESS OTHERWISE SPECIFIED
)
Symbol
1/
I
CCQ
V
OS
I
OS
I
B
CMRR
PSRR
V
OH
V
OL
I
O
(
SINK
)
I
O
(
SOURCE
)
SR
A
OL
UGBW
R
OUT
=3.6K to GND
R
OUT
=3.6K to V
CC
V
OUT
to V
CC
V
OUT
to V
EE
R
L
= 8K, Gain = 1
No Load
R
L
= 10K
R
L
= 2K, f = 1.0KHz
e
n
m
F = 5 kHz
T
C
25 °C, No Load
30
-30
45
2.0
90
4
84
15
3.3
100
6.5
T
C
= +25°C, -55°C 1/
T
C
= +125°C
No Load
-3
-100
-100
-1000
70
70
4.9
0.1
-75
55
Conditions
Min
Parameter
Quiescent Supply Current
Input Offset Voltage 1/
Input Offset Current 1/
Input Bias Current
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Voltage High
Output Voltage Low
Short Circuit
Output Current 2/
Slew Rate
1/
Typ
4.7
0.80
10
10
100
90
90
Max
5.5
3
100
100
1000
Units
mA
mV
pA
pA
dB
dB
V
V
mA
mA
V/uS
dB
MHz
dB
nV/
Hz
Deg
Open Loop Gain 1/
Unity Gain Bandwidth 1/
Channel Separation 2/
Input-Referred Voltage Noise 2/
Phase Margin 2/
Notes:
1/ Specification derated to reflect Total Dose exposure to 1 Mrad(Si) @ +25°C.
2/ Not Tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
SCD5900 Rev G 4/8/13
3
Aeroflex Plainview
Microcontroller MCU
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