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MMBD101L

Description
SILICON, UHF BAND, MIXER DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MMBD101L Overview

SILICON, UHF BAND, MIXER DIODE, TO-236AB

MMBD101L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandULTRA HIGH FREQUENCY
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
maximum noise index6 dB
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.28 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBD101/D
Schottky Barrier Diodes
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
Designed primarily for UHF mixer applications but suitable also for use in detector
and ultra–fast switching circuits. Supplied in an inexpensive plastic package for
low–cost, high–volume consumer requirements. Also available in Surface Mount
package.
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
MBD101
MMBD101LT1
Motorola Preferred Devices
SILICON SCHOTTKY
BARRIER DIODES
2
CATHODE
1
ANODE
1
2
3
CATHODE
1
ANODE
CASE 182– 02, STYLE 1
(TO–226AC)
3
MAXIMUM RATINGS
MBD101
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
PF
280
2.2
TJ
Tstg
+150
– 55 to +150
225
1.8
mW
mW/°C
°C
°C
MMBD101LT1
Value
7.0
Unit
Volts
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
DEVICE MARKING
MMBD101LT1 = 4M
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Forward Voltage(1)
(IF = 10 mAdc)
Reverse Leakage
(VR = 3.0 Vdc)
Symbol
V(BR)R
CT
VF
IR
Min
7.0
Typ
10
0.88
0.5
0.02
Max
1.0
0.6
0.25
Unit
Volts
pF
Volts
µAdc
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Berquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

MMBD101L Related Products

MMBD101L MMBD101LT1
Description SILICON, UHF BAND, MIXER DIODE, TO-236AB SILICON, UHF BAND, MIXER DIODE, TO-236AB
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Other features LOW NOISE LOW NOISE
Configuration SINGLE SINGLE
Maximum diode capacitance 1 pF 1 pF
Diode component materials SILICON SILICON
Diode type MIXER DIODE MIXER DIODE
frequency band ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
maximum noise index 6 dB 7 dB
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.28 W 0.28 W
Certification status Not Qualified Not Qualified
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Base Number Matches 1 1
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