BDC06 datasheet, PDF - EEWORLD Datasheet

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BDC06: Description500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BDC06 Overview

500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

BDC06 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	2.8 pF
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	2.5 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
VCEsat-Max	2 V
Base Number Matches	1

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Description	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N	N	N	N	N	N
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-based maximum capacity	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF	2.8 pF
Collector-emitter maximum voltage	300 V	300 V	300 V	300 V	300 V	300 V	300 V	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40	40	40	40	40	40	40	40
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power consumption environment	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	THROUGH-HOLE	THROUGH-HOLE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz	60 MHz
VCEsat-Max	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Base Number Matches	1	1	1	1	1	1	1	1	1	1
JEDEC-95 code	TO-92	TO-92	-	-	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99

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