
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TT Electronics plc |
| package instruction | HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | HIGH RELIABILITY |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 15 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-276AA |
| JESD-30 code | R-CBCC-N3 |
| JESD-609 code | e4 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 3 MHz |
| Base Number Matches | 1 |

| BDS12SMD05-JQR-AR4 | BDS12SMD05-JQRR4 | BDS12SMD05-JQR-BR4 | BDS12SMD05-QR-BR4 | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN |
| Is it Rohs certified? | conform to | conform to | conform to | conform to |
| Maker | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc |
| package instruction | HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN | HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Is Samacsys | N | N | N | N |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 15 A | 15 A | 15 A | 15 A |
| Collector-emitter maximum voltage | 100 V | 100 V | 100 V | 100 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 40 | 40 | 40 |
| JEDEC-95 code | TO-276AA | TO-276AA | TO-276AA | TO-276AA |
| JESD-30 code | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| JESD-609 code | e4 | e4 | e4 | e4 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal surface | GOLD | GOLD | GOLD | GOLD |
| Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 3 MHz | 3 MHz | 3 MHz | 3 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |