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BDS16SMD05-JQR-BR4

Description
Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BDS16SMD05-JQR-BR4 Overview

Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN

BDS16SMD05-JQR-BR4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-276AA
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
BDS16SMD05
Dimensions in mm (inches).
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
3.175 (0.125)
Max.
3.05 (0.120)
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
1
3
10.16 (0.400)
0.76
(0.030)
min.
5.72 (.225)
2
Bipolar NPN Device.
V
CEO
= 120V
0.127 (0.005)
16 PLCS
0.50(0.020)
7.26 (0.286)
0.127 (0.005)
I
C
= 15A
0.50 (0.020)
max.
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
SMD0.5 (TO276AA)
PINOUTS
1 – Base
2 – Collector
3 – Emitter
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
120
15
Units
V
A
-
Hz
@ 2/0.5 (V
CE
/ I
C
)
40
30M
250
50
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
15-Aug-02

BDS16SMD05-JQR-BR4 Related Products

BDS16SMD05-JQR-BR4 BDS16SMD05-JQRR4 BDS16SMD05-QR-BR4 BDS16SMD05-JQR-AR4
Description Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to
Maker TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
package instruction HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A 15 A 15 A
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40
JEDEC-95 code TO-276AA TO-276AA TO-276AA TO-276AA
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
JESD-609 code e4 e4 e4 e4
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface GOLD GOLD GOLD GOLD
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz
Base Number Matches 1 1 1 1
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