BDS16SMD05-JQR-B datasheet, PDF

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BDS16SMD05-JQR-B: DescriptionPower Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size308KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BDS16SMD05-JQR-B Overview

Power Bipolar Transistor, 15A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN

BDS16SMD05-JQR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-276AA
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BDS16SMD05 / BDS17SMD05

•

High Voltage

Hermetic SMD05 (TO-276AA) Isolated Metal Package

Ideally suited for Power Linear, Switching

and general Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

IE, IC

T stg

Collector – Base Voltage (IE = 0)

Collector – Emitter Voltage (IB = 0)

Emitter – Base Voltage (IC = 0)

Emitter, Collector Current

Base Current

Total Power Dissipation at

Junction Temperature Range

Storage Temperature Range

BDS16

120V

BDS17

150V

25°C

43.75W

+200°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

4.0

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Semelab Limited

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 9550

Issue 1

Page 1 of 1

Website:

http://www.semelab-tt.com

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