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BDV96

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size288KB,6 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BDV96 Overview

Transistor,

BDV96 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)20
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)100 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)4 MHz
Base Number Matches1

BDV96 Related Products

BDV96 BDV92 BDV94
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 10 A 10 A 10 A
Configuration Single Single Single
Minimum DC current gain (hFE) 20 20 5
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 100 W 100 W 100 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 4 MHz 4 MHz 4 MHz
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