BDW91 datasheet, PDF - EEWORLD Datasheet

BDW91: DescriptionSmall Signal Bipolar Transistor, 4A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,; CategoryDiscrete semiconductor The transistor; File Size46KB，1 Pages; ManufacturerCrimson Semiconductor Inc.

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BDW91 Overview

Small Signal Bipolar Transistor, 4A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

Parameter Name	Attribute value
Maker	Crimson Semiconductor Inc.
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	180 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	10 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	2 MHz
VCEsat-Max	2 V
Base Number Matches	1

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