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BDY25AR1

Description
Power Bipolar Transistor, 6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BDY25AR1 Overview

Power Bipolar Transistor, 6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN

BDY25AR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
22.23
(0.875)
max.
29.9 (1.177)
30.4 (1.197)
HIGH CURRENT FAST SWITCHING
HIGH RELIABILITY
SCREENING OPTIONS AVAILABLE
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
SWITCHING CIRCUITS
LARGE SIGNAL/POWER AMPLIFIERS
TO3 (TO204AA)
Pin 1 = Base
Pin 2 = Emitter
Case = Collector
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25° unless otherwise stated
C
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
J
T
stg
Collector - Base Voltage
Collector - Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
Total Power Dissipation at
T
case
= 25°
C
Derate above 25°
C
Junction Temperature
Storage Temperature
200V
140V
10V
6A
3A
50W
0.29 W/°
C
200°
C
-65 to 200°
C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
DOC 7595, ISSUE 1

BDY25AR1 Related Products

BDY25AR1 BDY25A
Description Power Bipolar Transistor, 6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN Power Bipolar Transistor, 6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it Rohs certified? conform to incompatible
Maker TT Electronics plc TT Electronics plc
package instruction HERMETIC SEALED, METAL, TO-3, 2 PIN HERMETIC SEALED, METAL, TO-3, 2 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 140 V 140 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1
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