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BF1100R

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size374KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BF1100R Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BF1100R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
surface mountYES
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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