BF259L.MODE1 datasheet, PDF - EEWORLD Datasheet

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BF259L.MODE1: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AA, HERMETIC SEALED, METAL, TO-5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BF259L.MODE1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AA, HERMETIC SEALED, METAL, TO-5, 3 PIN

BF259L.MODE1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-205AA
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	90 MHz
Base Number Matches	1

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BF259L

Dimensions in mm (inches).

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

Bipolar NPN Device in a

Hermetically sealed TO5

Metal Package.

6.10 (0.240)

6.60 (0.260)

38.00

(1.5)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

Bipolar NPN Device.

CEO

= 300V

5.08 (0.200)

typ.

= 0.1A

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

45°

TO5 (TO205AA)

PINOUTS

1 – Emitter

2 – Base

3 – Collector

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

300

0.1

Units

@ 10/30m (V

/ I

)

90M

0.8

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

20-Aug-02

BF259L.MODE1 Related Products

	BF259L.MODE1	BF259L	BF259L.MOD
Description	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AA, HERMETIC SEALED, METAL, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AA, HERMETIC SEALED, METAL, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AA, HERMETIC SEALED, METAL, TO-5, 3 PIN
Is it Rohs certified?	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Is Samacsys	N	N	N
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	300 V	300 V	300 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25
JEDEC-95 code	TO-205AA	TO-205AA	TO-205AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	90 MHz	90 MHz	90 MHz
Base Number Matches	1	1	1
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED

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