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BSD22

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size32KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BSD22 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BSD22 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)0.05 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.23 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BSD22
MOSFET N-channel depletion
switching transistor
Product specification
File under Discrete Semiconductors, SC07
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