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BD839

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size214KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BD839 Overview

Transistor,

BD839 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)125 MHz
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

BD839 Related Products

BD839 BD841 BD843
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 1.5 A 1.5 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 40 40 40
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 10 W 10 W 10 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz
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