FB1L3N datasheet, PDF - EEWORLD Datasheet

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FB1L3N: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size344KB，6 Pages; ManufacturerNEC Electronics

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FB1L3N Overview

Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN

FB1L3N Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	PLASTIC, SC-59, 3 PIN
Reach Compliance Code	unknown
Is Samacsys	N
Other features	BUILT IN BIAS RESISTOR RATIO IS 2.127
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	135
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

COMPOUND TRANSISTOR

FB1 SERIES

ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR

FOR MID-SPEED SWITCHING

FEATURES

• Up to 0.7 A current drive available

• On-chip bias resistor

• Low power consumption during drive

<R>

• Package: 3-pin Mini Mold (SC-59)

PACKAGE DRAWING (Unit: mm)

2.8±0.2

0.4

+0.1

–0.05

1.5

0.65

+0.1

–0.15

2.9±0.2

0.95

0.4

–0.05

+0.1

0.95

0.3

Marking

1.1 to 1.4

0.16

+0.1

–0.06

0 to 0.1

FB1 SERIES LISTS

Products

FB1A4A

FB1L2Q

FB1A3M

FB1F3P

FB1J3P

FB1L3N

FB1A4M

Marking

P30

P31

P32

P33

P36

P34

P35

(kΩ)

−

0.47

1.0

2.2

3.3

4.7

(kΩ)

4.7

1.0

1. Emitter (E)

2. Base (B)

3. Collector (C)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

Total Power Dissipation

Junction Temperature

Storage Temperature

Note

Symbol

CBO

CEO

EBO

C(DC)

C(pulse)

B(DC)

stg

Ratings

0.7

1.0

200

150

−55

+150

Unit

°C

Note

≤

10 ms, Duty Cycle

≤

50%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16180EJ2V0DS00 (2nd edition)

Date Published February 2008 NS

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FB1L3N Related Products

	FB1L3N	FB1A4M	0402200VF104K4U4A	FB1A4A	040225VA104G4U2A	FB1J3P	FB1L2Q
Description	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN	Automotive MLCC	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN	Automotive MLCC	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SC-59, 3 PIN
Maker	NEC Electronics	NEC Electronics	-	NEC Electronics	-	NEC Electronics	NEC Electronics
package instruction	PLASTIC, SC-59, 3 PIN	PLASTIC, SC-59, 3 PIN	-	PLASTIC, SC-59, 3 PIN	-	PLASTIC, SC-59, 3 PIN	PLASTIC, SC-59, 3 PIN
Reach Compliance Code	unknown	unknown	-	unknown	-	unknown	unknown
Is Samacsys	N	-	-	N	-	N	N
Other features	BUILT IN BIAS RESISTOR RATIO IS 2.127	BUILT IN BIAS RESISTOR RATIO IS 1	-	BUILT IN BIAS RESISTOR	-	BUILT IN BIAS RESISTOR RATIO IS 3.03	BUILT IN BIAS RESISTOR RATIO IS 10
Maximum collector current (IC)	0.7 A	0.7 A	-	0.7 A	-	0.7 A	0.7 A
Collector-emitter maximum voltage	25 V	25 V	-	25 V	-	25 V	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	135	135	-	135	-	135	135
JESD-30 code	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	-	1	-	1	1
Number of terminals	3	3	-	3	-	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	-	NPN	-	NPN	NPN
Certification status	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	YES	-	YES	-	YES	YES
Terminal form	GULL WING	GULL WING	-	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	DUAL	-	DUAL	-	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	-	SILICON	SILICON
Base Number Matches	1	1	-	1	-	1	1

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