DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD48
NPN/PNP resistor-equipped
transistors; R1, R2 = 47 kΩ, 47 kΩ
and 2.2 kΩ, 47 kΩ
Product specification
Supersedes data of 2001 Sep 24
2001 Nov 07
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ
FEATURES
•
300 mW total power dissipation
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
•
Reduces number of components as replacement of two
SC-75/SC-89 packaged transistors
•
Reduces required board space
•
Reduces pick and place costs
•
Self alignment during soldering due to straight leads.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
1
2
3
1
Top view
MAM448
PEMD48
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
CM
R1
R2
PARAMETER
collector-emitter voltage
peak collector current
MAX.
50
100
UNIT
V
mA
Transistor TR1 (NPN)
bias resistor
bias resistor
47
47
kΩ
kΩ
Transistor TR2 (PNP)
R1
R2
bias resistor
bias resistor
2.2
47
kΩ
kΩ
handbook, halfpage
6
5
4
R1
TR1
R2
5
4
6
R2
TR2
R1
MARKING
TYPE NUMBER
PEMD48
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
MARKING CODE
48
2
3
Fig.1 Simplified outline (SOT666) and symbol.
2, 5
1, 4
MBK120
6, 3
Fig.2 Equivalent inverter symbol.
2001 Nov 07
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MIN.
PEMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
V
I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
positive
negative
input voltage TR2
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
VALUE
416
UNIT
K/W
total power dissipation
300
mW
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
+5
−12
100
100
200
+150
150
+150
V
V
mA
mA
mW
°C
°C
°C
+40
−10
V
V
open emitter
open base
open collector
50
50
10
V
V
V
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
80
−
−
3
33
0.8
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 0; V
EB
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
I
C
=
−100 µA;
V
CE
=
−5
V
I
C
=
−5
mA; V
CE
=
−0.3
V
−
−
100
−
−
−1.1
1.54
17
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
−
TYP.
−
−
−
−
−
−
1.2
0.6
47
1
−
−
−
−
−0.6
−0.75
2.2
21
−
PEMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
CEO
collector cut-off current
collector cut-off current
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 50 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°C
Transistor TR1 (NPN)
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
-------
-
R1
C
c
emitter cut-off current
DC current gain
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 5 V
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 0.3 V
90
−
150
0.8
−
61
1.2
2.5
−180
−
−100
−0.5
−
2.86
26
3
pF
mV
V
V
kΩ
pF
µA
mV
V
V
kΩ
µA
100
1
50
nA
µA
µA
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
Transistor TR2 (PNP)
emitter cut-off current
DC current gain
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
collector-emitter saturation voltage I
C
=
−5
mA; I
B
=
−0.25
mA
2001 Nov 07
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors;
R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ
PEMD48
10
3
handbook, halfpage
(2)
MHC007
10
−1
handbook, halfpage
VCEsat
(V)
MHC006
hFE
(1)
10
2
(3)
(1)
(2)
(3)
10
1
10
−1
1
10
IC (mA)
10
2
10
−2 −1
10
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
TR1 (NPN);
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
10
MHC009
10
2
handbook, halfpage
Vi(on)
(V)
10
MHC008
Vi(off)
(V)
(1)
1
(2)
(3)
(1)
1
(3) (2)
10
−1
10
−2
10
−1
1
IC (mA)
10
10
−1
10
−1
1
10
IC (mA)
10
2
TR1 (NPN);
V
CE
= 5 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
TR1 (NPN);
V
CE
= 0.3 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
Fig.5
Input-off voltage as a function of collector
current; typical values.
Fig.6
Input-on voltage as a function of collector
current; typical values.
2001 Nov 07
5
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