DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY58; BCY59
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 17
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
Switching and amplification.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complements: BCY78 and BCY79.
3
BCY58; BCY59
PINNING
PIN
1
2
3
emitter
base
collector, connected to case
DESCRIPTION
handbook, halfpage
1
3
2
MAM264
2
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BCY58
BCY59
V
CEO
collector-emitter voltage
BCY58
BCY59
I
C
P
tot
h
FE
collector current (DC)
total power dissipation
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
f
T
t
off
transition frequency
turn-off time
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 1 mA; I
Boff
=
−1
mA
T
amb
≤
45
°C
T
case
≤
45
°C
I
C
= 2 mA; V
CE
= 5 V
120
180
250
380
150
−
170
250
350
500
−
480
450
220
310
460
630
−
800
800
MHz
ns
ns
open base
−
−
−
−
−
−
−
−
−
−
32
45
100
340
1
V
V
mA
mW
W
open emitter
−
−
−
−
32
45
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
Con
= 100 mA; I
Bon
= 10 mA; I
Boff
=
−10
mA
−
1997 Jun 17
2
Philips Semiconductors
Product specification
NPN switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BCY58
BCY59
V
CEO
collector-emitter voltage
BCY58
BCY59
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
45
°C
T
case
≤
45
°C
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCY58; BCY59
MIN.
MAX.
32
45
32
45
7
100
200
200
340
1
+150
200
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
PARAMETER
thermal resistance from junction to case
CONDITIONS
VALUE
450
150
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BCY58
I
CBO
collector cut-off current
BCY59
I
EBO
h
FE
emitter cut-off current
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 45 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 10
µA;
V
CE
= 5 V
−
20
40
100
20
95
190
300
−
−
−
−
−
−
−
−
−
−
10
10
10
nA
µA
nA
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
j
= 150
°C
−
−
−
−
10
10
nA
µA
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Jun 17
3
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
SYMBOL
h
FE
PARAMETER
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
CONDITIONS
I
C
= 2 mA; V
CE
= 5 V
MIN.
120
180
250
380
TYP.
170
250
350
500
250
300
390
550
−
−
−
−
100
250
700
875
−
−
−
−
MAX.
220
310
460
630
−
400
630
1000
−
−
−
−
350
700
850
1200
5
15
−
10
UNIT
h
FE
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
I
C
= 10 mA; V
CE
= 1 V
80
120
160
240
I
C
= 100 mA; V
CE
= 1 V
40
45
60
60
50
150
600
750
−
150
−
I
C
= 100 mA; I
B
= 2.5 mA
h
FE
DC current gain
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
BCY58/IX; BCY59/IX
BCY58/X; BCY59/X
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.25 mA
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 100 mA; I
B
= 2.5 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
−
Switching times (between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 100 mA; I
Bon
= 10 mA;
I
Boff
=
−10
mA
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−1
mA
−
−
−
−
−
−
−
−
−
−
−
−
85
35
50
480
400
80
55
5
50
450
250
200
150
−
−
800
−
−
150
−
−
800
−
−
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1997 Jun 17
4
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
BCY58; BCY59
SOT18/13
j
B
α
seating plane
w
M
A
M
B
M
1
k
D
1
b
2
3
a
A
D
A
L
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
5.31
4.74
a
2.54
b
0.47
0.41
D
5.45
5.30
D1
4.70
4.55
j
1.03
0.94
k
1.1
0.9
L
15.0
12.7
w
0.40
α
45°
OUTLINE
VERSION
SOT18/13
REFERENCES
IEC
B11/C7 type 3
JEDEC
TO-18
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
1997 Jun 17
5
Embedded System
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