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BYV28-200Z

Description
Rectifier Diode, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size320KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

BYV28-200Z Overview

Rectifier Diode, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, DO-27,

BYV28-200Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
package instructionO-PALF-W2
Reach Compliance Codeunknown
Is SamacsysN
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.02 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BYV28-50(Z)
- -
- BYV28-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 3.5, 3.0 A
SUPER FAST RECT IFIERS
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
DO - 27
MECHANICAL DATA
Cas e: JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYV28 BYV28 BYV28 BYV28 BYV28 BYV28 BYV28
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
3.5
300
210
300
400
280
400
600
420
600
V
V
V
A
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
I
FSM
90.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.02
5.0
100.0
35
100
75
- 55 ----- + 125
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V D C.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 1764115
BL
GALAXY ELECTRICAL
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