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MRF9045LR1

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size344KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MRF9045LR1 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN

MRF9045LR1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Manufacturer packaging codeCASE 360B-05
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9045/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common - source amplifier applications in
28 volt base station equipment.
Typical Two - Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — - 32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9045LR1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF9045LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF9045LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF9045LR1
MRF9045LSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
MRF9045LR1
MRF9045LSR1
Symbol
R
θJC
Symbol
V
DSS
V
GS
P
D
Value
65
- 0.5, + 15
125
0.71
175
1
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
1.4
1.0
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF9045LR1 MRF9045LSR1
1

MRF9045LR1 Related Products

MRF9045LR1 MRF9045LSR1
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360, CASE 360B-05, 2 PIN UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-360S, CASE 360C-05, 2 PIN
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2
Contacts 2 2
Manufacturer packaging code CASE 360B-05 CASE 360C-05
Reach Compliance Code unknown unknown
Is Samacsys N N
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F2 R-CDFP-F2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLATPACK
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 175 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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