BSW67A-JQR datasheet, PDF - EEWORLD Datasheet

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BSW67A-JQR: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BSW67A-JQR Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN

BSW67A-JQR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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BSW67A

MECHANICAL DATA

Dimensions in mm (inches)

8.51 (0.34)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

SILICON NPN

PLANAR TRANSISTOR

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.89

max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

FEATURES

• V

CBO

= 120V

• V

CEO

= 120V

• I

= 1.0A

2.54

(0.100)

5.08 (0.200)

typ.

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

DESCRIPTION

45°

Underside View

TO39 PACKAGE (TO-205AD)

Pin 1 = Emitter

Pin 2 = Base

Pin 3 = Collector

General Purpose NPN Transistor in a

Hermetic TO39 Package

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CEO

TOT

stg

θJC

θJA

Collector

–

Base Voltage (open emitter)

Collector

–

Emitter Voltage (open base)

Collector Current (d.c.)

Collector Current (peak value)

Total Device Dissipation @ T

amb

≤

45°C

Total Device Dissipation @ T

≤

25°C

Total Device Dissipation @ T

≤

100°C

Storage Temperature

Junction Temperature

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

120V

1.0A

0.7W

2.85W

–65 to 200°C

200°C

35°C / W

220°C / W

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 7881

Issue 1

BSW67A-JQR Related Products

	BSW67A-JQR	BSW67A	BSW67A-JQR-A	BSW67A-JQR-B
Description	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	120 V	120 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15	15
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	50 MHz	50 MHz	50 MHz
Base Number Matches	1	1	1	1

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