DISCRETE SEMICONDUCTORS
DATA SHEET
BLV897
UHF push-pull power transistor
Preliminary specification
Supersedes data of 1997 Oct 03
1997 Nov 10
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
FEATURES
•
Internal input matching for an optimum wideband
capability and high gain
•
Polysilicon emitter ballasting resistors for an optimum
temperature profile
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Common emitter class-AB operation in base stations in
the 800 to 960 MHz frequency band.
handbook, halfpage
BLV897
PINNING - SOT324B
PIN
1
2
3
4
5
SYMBOL
c1
c2
b1
b2
e
DESCRIPTION
collector 1
collector 2
base 1
base 2
common emitters connected to
flange
c1
2
b1
e
5
b2
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull
configuration. The device is encapsulated in a SOT324B
4-lead rectangular flange package with a ceramic cap.
The common emitters are connected to the flange.
1
3
Top view
4
c2
MAM217
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter push-pull test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
f
(MHz)
900
900
V
CE
(V)
24
24
I
CQ
(mA)
2
×
80
2
×
80
P
L
(W)
30
30 (PEP)
G
p
(dB)
≥10
≥11
η
C
(%)
≥45
≥35
d
3
(dBc)
−
<−32; typ.
−37
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Nov 10
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. Total device; both sections equally loaded.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. Total device; both sections equally loaded.
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
C
c
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
CONDITIONS
I
C
= 15 mA; I
E
= 0
I
C
= 30 mA; I
B
= 0
I
E
= 0.6 mA; I
C
= 0
V
CB
= 28 V; V
BE
= 0
V
CE
= 10 V; I
C
= 1 A
MIN.
70
30
3
−
30
TYP.
−
−
−
−
−
18
PARAMETER
CONDITIONS
VALUE
1.79
0.4
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
MIN.
BLV897
MAX.
70
30
3
5
5
97
+150
200
V
V
V
A
A
W
UNIT
°C
°C
UNIT
K/W
K/W
thermal resistance from junction to mounting base P
tot
= 97 W; note 1
thermal resistance from mounting base to heatsink note 1
MAX.
−
−
−
1.5
120
−
UNIT
V
V
V
mA
pF
V
CB
= 24 V; I
E
= i
e
= 0; f = 1 MHz
−
1997 Nov 10
3
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter push-pull class-AB test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
f
(MHz)
900
900
V
CE
(V)
24
24
I
CQ
(mA)
2
×
80
2
×
80
P
L
(W)
30
30 (PEP)
G
p
(dB)
≥10
≥11
η
C
(%)
≥45
≥35
BLV897
d
3
(dBc)
−
<−32; typ.
−37
Ruggedness in class-AB operation
The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
conditions: V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz; T
h
= 25
°C;
P
L
= 30 W. The transistor is also capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at P
L
= 30 W (PEP).
handbook, halfpage
50
MBK287
PL
(W)
40
handbook, halfpage
G
14
MBK286
p
(dB)
12
70
η
C
(%)
60
50
Gp
10
30
η
C
8
6
4
10
2
0
0
1
2
3
4
5
6
PD (W)
0
0
10
20
30
40
PL (W)
40
30
20
10
0
50
20
V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz.
V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz.
Fig.2
Load power as a function of drive power;
typical values.
Fig.3
Power gain and collector efficiency as
functions of load power; typical values.
1997 Nov 10
4
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
handbook, full pagewidth
L12
VBB
R3
C8
L16
R6
C24
+V
CC
C22
C6
R1
C10
C12
C14
C16
C18
C20
input
50
Ω
,,,,
,,,,
,,,,
,, ,,,,
,, ,,,,
,,,,
,,,,
,,,,
,,,,
L14
L10
L8
L6
L1
C1
L4
L2
C4
C3
C2
L3
L5
L7
L9
L11
L15
C5
R2
C9
C11
C13
C15
L13
C7
L20
DUT
L21
,,,,
,,,,
,,,,,,
,,,,
,,,,,,
,,,,
,,,,
,,,,
L18
L22
L24
L26
C28
L28
L29
C25
C27
C26
C29
L25
L27
L30
L23
L19
C19
R5
C21
+V
CC
L17
C23
MGM146
output
50
Ω
C17
VBB
R4
Fig.4 Class-AB test circuit at 900 MHz.
1997 Nov 10
5
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