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BUW14

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size60KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BUW14 Overview

Transistor,

BUW14 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUW14
GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
0.4
MAX.
1000
450
0.5
1
20
-
UNIT
V
V
A
A
W
µs
T
mb
60 ˚C
PINNING - SOT82
PIN
1
2
3
DESCRIPTION
emitter
collector
base
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
0.5
1
0.2
0.3
0.3
20
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
mb
60 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
100
MAX.
4.5
-
UNIT
K/W
K/W
1
Turn-off current.
March 1992
1
Rev 1.000
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