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BDW51B.MODR1

Description
15A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

BDW51B.MODR1 Overview

15A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN

BDW51B.MODR1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMELAB
Parts packaging codeTO-3
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee1
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
BDW51B
Dimensions in mm (inches).
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
22.23
(0.875)
max.
16.64 (0.655)
17.15 (0.675)
1
2
Bipolar NPN Device.
V
CEO
= 80V
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
I
C
= 15A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 – Base
2 – Emitter
Case - Collector
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
80
15
Units
V
A
-
Hz
@ 4/5 (V
CE
/ I
C
)
20
3M
150
125
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
31-Jul-02

BDW51B.MODR1 Related Products

BDW51B.MODR1
Description 15A, 80V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker SEMELAB
Parts packaging code TO-3
package instruction FLANGE MOUNT, O-MBFM-P2
Contacts 2
Reach Compliance Code compliant
ECCN code EAR99
Is Samacsys N
Shell connection COLLECTOR
Maximum collector current (IC) 15 A
Collector-emitter maximum voltage 80 V
Configuration SINGLE
Minimum DC current gain (hFE) 20
JEDEC-95 code TO-204AA
JESD-30 code O-MBFM-P2
JESD-609 code e1
Number of components 1
Number of terminals 2
Package body material METAL
Package shape ROUND
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal surface TIN SILVER COPPER
Terminal form PIN/PEG
Terminal location BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON
Nominal transition frequency (fT) 3 MHz
Base Number Matches 1
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