Small Signal Bipolar Transistor, 0.2A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| package instruction | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Maximum collector current (IC) | 0.2 A |
| Collector-emitter maximum voltage | 65 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 75 |
| JESD-30 code | R-PSIP-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.5 W |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| VCEsat-Max | 0.25 V |
| Base Number Matches | 1 |
| BC556P | BC213P | BC212P | BC557P | BC558P | |
|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.2A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 | Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 | IN-LINE, R-PSIP-W3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Collector-emitter maximum voltage | 65 V | 30 V | 50 V | 45 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 75 | 80 | 60 | 75 | 75 |
| JESD-30 code | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 | R-PSIP-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | 235 | 235 | 235 | 235 | 235 |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.5 W | 0.3 W | 0.3 W | 0.5 W | 0.5 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Guideline | CECC | CECC | CECC | CECC | CECC |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 200 MHz | 200 MHz | 150 MHz | 150 MHz |
| VCEsat-Max | 0.25 V | 0.6 V | 0.6 V | 0.25 V | 0.25 V |
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