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BUZ31

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size418KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BUZ31 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)12.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

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Index Files: 2222  1607  2636  1946  1981  45  33  54  40  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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