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BCY56.MODG4

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size21KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCY56.MODG4 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN

BCY56.MODG4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
JESD-609 codee4
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceGOLD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
BCY56
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
GENERAL PURPOSE, LOW POWER,
NPN SWITCHING TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
• LOW NOISE
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
12.7 (0.500)
min.
3
2
1
APPLICATIONS:
Intended for general purpose very high gain
low level and low noise applications. The
BCY56 is also suitable for low speed
switching applications.
TO-18 (TO-206AA)
Underside View
PAD 2 – Base
PAD 3 – Collector
Pin 1 – Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
I
C
P
TOT
T
J
, T
STG
R
JC
R
JA
Collector - Base Voltage (I
E
=0)
Collector - Emitter Voltage (I
B
=0)
Collector Current
Total Power Dissipation T
amb
< 25
°C
Maximum Junction And Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
45V
45V
100mA
300mW
-65°C to 175°C
200°C/mW
500°C/mW
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 4082
Issue 1

BCY56.MODG4 Related Products

BCY56.MODG4 BCY56G4
Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
Is it Rohs certified? conform to conform to
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JEDEC-95 code TO-206AA TO-206AA
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface GOLD GOLD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
Base Number Matches 1 1

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