DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | STABISTOR DIODE |
| Maximum forward voltage (VF) | 0.94 V |
| Minimum forward voltage (VF) | 0.85 V |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.4 W |
| Certification status | Not Qualified |
| Reverse test voltage | 4 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BA314136 | BA314113 | BA314133 | BA314116 | BA314153 | BA314143 | |
|---|---|---|---|---|---|---|
| Description | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode | DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE | STABISTOR DIODE |
| Maximum forward voltage (VF) | 0.94 V | 0.94 V | 0.94 V | 0.94 V | 0.94 V | 0.94 V |
| Minimum forward voltage (VF) | 0.85 V | 0.85 V | 0.85 V | 0.85 V | 0.85 V | 0.85 V |
| JEDEC-95 code | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum power dissipation | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Reverse test voltage | 4 V | 4 V | 4 V | 4 V | 4 V | 4 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | NXP | - | NXP | NXP | NXP | NXP |
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