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BAV102,115

Description
BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
CategoryDiscrete semiconductor    diode   
File Size100KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAV102,115 Overview

BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin

BAV102,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Manufacturer packaging codeSOD80C
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current5 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.25 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
BAV102; BAV103
Single general-purpose switching diodes
Rev. 4 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Single general-purpose switching diodes, fabricated in planar technology, and
encapsulated in small hermetically sealed glass SOD80C Surface-Mounted
Device (SMD) packages.
Table 1.
Product overview
Package
NXP
BAV102
BAV103
SOD80C
JEITA
-
single
Configuration
Type number
1.2 Features and benefits
High switching speed: t
rr
50 ns
Low leakage current
Low capacitance: C
d
5 pF
Small hermetically sealed glass
SMD package
1.3 Applications
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
Quick reference data
Parameter
forward current
reverse voltage
BAV102
BAV103
t
rr
[1]
[2]
[3]
Conditions
[1][2]
Min
-
-
-
[3]
Typ
-
-
-
-
Max
250
150
200
50
Unit
mA
V
V
ns
reverse recovery time
Pulse test: t
p
300
μs; δ ≤
0.02.
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.

BAV102,115 Related Products

BAV102,115 BAV103,115
Description BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin BAV102; BAV103 - Single general-purpose switching diodes MELF 2-Pin
Brand Name NXP Semiconductor NXP Semiconductor
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code MELF MELF
package instruction O-LELF-R2 O-LELF-R2
Contacts 2 2
Manufacturer packaging code SOD80C SOD80C
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V
JESD-30 code O-LELF-R2 O-LELF-R2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 5 A 5 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Maximum output current 0.25 A 0.25 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.4 W 0.4 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 250 V
Maximum reverse current 0.1 µA 0.1 µA
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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