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FS8R12KF

Description
Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size39KB,1 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

FS8R12KF Overview

Insulated Gate Bipolar Transistor, 8A I(C), 1200V V(BR)CES, N-Channel,

FS8R12KF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)8 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X17
Number of components6
Number of terminals17
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max4 V
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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