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BYV95C

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerGalaxy Microelectronics
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BYV95C Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,

BYV95C Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instructionO-PALF-W2
Reach Compliance Codeunknown
Is SamacsysN
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
BYV95A---BYV95C
VOLTAGE RANGE: 200 --- 600 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIERS
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon, Alcohol,Is opropanol and
sim ilar solvents
DO - 15
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plastic
Term inals: Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces,0.39 gram s
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise s pecified.
Single phase,half wave,50Hz,resis tive or inductive load. For capacitive load,derate by 20%.
BYV95A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYV95B
400
280
200
1.5
BYV95C
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.6
5.0
100.0
250
18
45
-55 ---- + 150
-55 ---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261047
BL
GALAXY ELECTRICAL
1.

BYV95C Related Products

BYV95C
Description Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,
Maker Galaxy Microelectronics
package instruction O-PALF-W2
Reach Compliance Code unknown
Is Samacsys N
application FAST RECOVERY
Shell connection ISOLATED
Configuration SINGLE
Diode component materials SILICON
Diode type RECTIFIER DIODE
Maximum forward voltage (VF) 1.6 V
JEDEC-95 code DO-15
JESD-30 code O-PALF-W2
Maximum non-repetitive peak forward current 50 A
Number of components 1
Phase 1
Number of terminals 2
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Maximum output current 1.5 A
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form LONG FORM
Maximum repetitive peak reverse voltage 600 V
Maximum reverse current 5 µA
Maximum reverse recovery time 0.25 µs
surface mount NO
Terminal form WIRE
Terminal location AXIAL
Base Number Matches 1

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